Abstract
ITO:Zr films were deposited on glass substrate by co-sputtering with an ITO target and a Zirconium target. Substrate temperature and oxygen flow rate have important influences on the properties of ITO:Zr films. ITO:Zr films show better crystalline structure and lower surface roughness. Better optical-electrical properties of the films can be achieved at low substrate temperature. The certain oxygen flow rates worsen the electrical properties but can enhance the optical properties of ITO:Zr films. The variation in optical band gap can be explained on the basis of Burstin-Moss effect.
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This work is supported by the Research Fund for Shanghai applied material (0525).
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Zhang, B., Xu, Xf., Dong, Xp. et al. Properties of ITO:Zr films deposited by co-sputtering. Optoelectron. Lett. 4, 137–139 (2008). https://doi.org/10.1007/s11801-008-7132-5
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DOI: https://doi.org/10.1007/s11801-008-7132-5