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Correction to: JMEPEG (2018) 27:2960–2966 https://doi.org/10.1007/s11665-018-3397-4
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Page 4, Fig. 3 caption: SEM micrographs on the polished surfaces of S-SiC sintered at (a) 1950 °C, (b) 2050 °C, (c) 2150 °C and (d) 2180 °C.
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Page 4, Fig. 4 caption: Microstructure of S-SiC sintered at (a) 1950 °C, (b) 2050 °C, (c) 2150 °C and (d) 2180 °C.
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Page 5, Table 2: The numeric value in the second row of third column should be 2046 ± 80 instead of 20.46 ± 80.
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Jana, D.C., Barick, P. & Saha, B.P. Correction to: Effect of Sintering Temperature on Density and Mechanical Properties of Solid-State Sintered Silicon Carbide Ceramics and Evaluation of Failure Origin. J. of Materi Eng and Perform 27, 4978 (2018). https://doi.org/10.1007/s11665-018-3554-9
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DOI: https://doi.org/10.1007/s11665-018-3554-9