Abstract
The growth of thick CdTe epitaxial layers by the hydrogen transport vapor phase epitaxy (H2T-VPE) method is reported for the first time. The thermodynamics of the H2 transport method of CdTe is analyzed to determine the equilibrium partial pressures of the molecular species in the vapor and its supersaturation as a function of growth conditions. (100)-oriented CdTe epilayers are successfully grown by H2T-VPE on hybrid ZnTe/GaAs(100) substrates prepared by metalorganic vapor phase epitaxy. Growth rates up to 10 µm/h are obtained at temperatures ∼760°C and with the CdTe source temperature at 827°C. The achievement of even higher growth rates can be foreseen by using the present method under slightly different conditions; several hundreds micron thick CdTe layers can be thus grown by the H2T-VPE. CdTe samples have mirror-like, nearly featureless surfaces. Also, CdTe epilayers have shown a medium-to-high resistivity at room temperature, possibly as a result of compensation by donor impurities diffusing from GaAs. Still the growth of highly resistive layers by in-situ chlorine doping during the H2T-VPE growth is possible. In summary, H2T-VPE is a potential alternative to traditional melt- and vapor-growth methods for the synthesis of detector-grade CdTe for application to the 1–100 keV x-ray energy range.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Y. Eisen, Nucl. Instrum. Meth Phys. Res. A 180, 431 (1996).
M. Hage-Ali, and P. Siffert, Semiconductors for Room Temperature Nuclear Detector Applications, ed. T.E. Schlesinger and R.B. James, Semiconductors and Semimetals, Vol. 43 (San Diego: Academic Press, 1995).
H. Hartmann, R. Mach and B. Selle, Current Topics in Materials Science, ed. E. Kaldis, Vol. 9 (Amsterdam: North Holland, 1982).
E.N. Yeremin, Fundamentals of Chemical Thermodynamics (Moscow: Mir Publishers, 1981).
G. Leo, M. Longo, N. Lovergine, A.M. Mancini, L. Vasanelli, F. Romanato, A.V. Drigo, T. Peluso and L. Tapfer, J. Vac. Sci. Technol. B 14 (3), 1739 (1996).
N. Lovergine, M. Longo, P. Prete, C. Gerardi, L. Calcagnile, R. Cingolani and A.M. Mancini, J. Appl. Phys. 81 (2), 685 (1997).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Lovergine, N., Prete, P., Cola, A. et al. Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications. J. Electron. Mater. 28, 695–699 (1999). https://doi.org/10.1007/s11664-999-0056-4
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-999-0056-4