Abstract
Hall mobilities and resistance area products RoA of infrared diodes in epitaxial Pb1-xSnxSe layers on CaF2 covered Si(111) substrates were correlated with threading dislocation densities p. The low temperature saturation Hall mobilities were entirely determined by p and proportional to their mean spacing 1/ √ρ. For the photodiodes, the R0A values at low temperatures were inversely propor-tional to ρ. A model where each dislocation in the active area of the diodes causes a shunt resistance correctly describes the results, the value of this resistance for a single dislocation is 1.2 GΩ for PbSe at 85K. The dislocation densities were in the 2 × 107 to 5 × 108cm-2 range for the 3-4 μm thick as-grown layers. Higher R0A values are obtainable by lowering these densities by thermal annealing, which sweeps the threading ends of the misfit dislocations to the edges of the sample.
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Fach, A., John, J., Müller, P. et al. Material properties of Pb1-xSnxSe epilayers on Si and their correlation with the performance of infrared photodiodes. J. Electron. Mater. 26, 873–877 (1997). https://doi.org/10.1007/s11664-997-0266-6
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DOI: https://doi.org/10.1007/s11664-997-0266-6