Abstract
The effect of parasitic series resistances on electrochemical capacitance-voltage (EC-V) profiling is simulated numerically for AlxGaj1-xAs/InyGa1-yAs pseudomorphic high electron mobility transistor (p-HEMT) structures. The actual EC-V measurement is simulated numerically by reconstructing the charge distribution from an intrinsic distribution calculated from a self-consistent k p model. The calculated charge distribution then forms the basis for examining the possible profiles an EC-V measurement would produce when parasitics are taken into account. From a simple lumped-circuit model, it is shown that parasitic resistances distort the shape of the charge distribution by changing the relative heights of the 5-layer and channel charges. Hysteresis effects may also occur and may be accompanied by a change in material type from n to p even though the material is known to be n-type over the entire range of measurement. Additionally, an undesirable dependence of the charge profile on the probe signal frequency is found.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
T. Ambridge and M.M. Faktor, Gallium Arsenide and Re- lated Compounds, ed. J. Bok, Conf. Ser. No. 24(Bristol, U.K.: Inst. Phys., 1974), p. 320.
T. Ambridge, J.L. Stevenson and R.M. Redstall, J. Electrochem. Soc. 127, 222 (1980).
P. Blood, Semicond. Sei. Technol. 1, 7 (1986).
C.E. Stutz, B. Jogai. D.C. Look, J.M. Ballingall and T.J. Rogers, Appl. Phys. Lett. 64, 2703 (1994).
B. Jogai and C.E. Stutz, J. Appl. Phys. 78, 2531 (1995).
B. Jogai, J. Appl. Phys. 76 2316 (1994).
W.C. Johnson and P.T. Panousis, IEEE Trans. Electron Dev. 18, 965 (1971).
D.P. Kennedy and R.R. O’Brien, IBMJ. Res. Develop. 13,212 (1969).
J.D. Wileyand, G.L. Miller, IEEE Trans. Electron Dev. ED-22, 265 (1975).
R.E. Leoni, Y. Zhao, J.C.M. Hwang and T.L. Hierl,Proc. State of the Art Program on Compound Semiconductors, (The Electrochemical Soc, Oct. 1994).
C.E. Stutz, unpublished.
T. Humer-Hager, Semicond. Sci. Technol. 3, 553 (1988).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Jogai, B., Stutz, C.E. Effect of parasitics on electrochemical capacitance-voltage profiling of pseudomorphic high electron mobility transistor structures. J. Electron. Mater. 26, 863–867 (1997). https://doi.org/10.1007/s11664-997-0264-8
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/s11664-997-0264-8