Abstract
Tin doped indium oxide (ITO) films with high conductivity and charge carrier mobility were deposited at room temperature using RF-magnetron sputtering, without any post annealing treatment. It is observed that structural, optical, morphological and electrical properties of these ITO films depend on deposition time. All the synthesized films show optical transmittance > 90% and band gap of ∼ 3.6 eV. A change in crystal orientation from (222) to (400) with slight shift of peaks toward lower 2θ has been observed with the increase in deposition time. The synthesized films are compact, uniform and free from cracks. Moreover, there was an increase in grain size and shape with the progress in deposition time. Synthesized ITO films with (400) orientation have high conductivity (∼ 2 × 103 Ω−1 cm−1), high charge carrier mobility (∼ 348 cm2 V−1 s−1) and a high figure of merit (104 × 10−3 Ω−1). The synthesized thin films can have prospective applications in opto-electronic devices such as solar cells, light emitting diodes, etc.
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Acknowledgment
Ajinkya Bhorde is thankful to the Department of Science and Technology (DST), Government of India for INSPIRE fellowship. Ravindra Waykar, Shruthi Nair, Subhash Pandharkar, Ashish Waghmare and Dhirsing Naik are thankful to the Ministry of New and Renewable Energy (MNRE), Government of India for the financial support under the National Renewable Energy Fellowship (NREF) program. Rahul Aher is thankful to Savitribai Phule Pune University, Pune for the award of Bharatratna J. R. D. Tata Gunwant Sanshodhak Shishyavruti. All authors are thankful to the Central Instrumentation Facility (CIF), Savitribai Phule Pune University for providing analytical facilities. One of the authors, Sandesh Jadkar, is thankful to theUniversity Grants Commission (UPE program), New Delhi and the Indo-French Centre for the Promotion of Advanced Research-CEFIPRA, Department of Science and Technology, New Delhi for special financial support.
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Bhorde, A., Waykar, R., Nair, S. et al. Room Temperature Synthesis of Transparent and Conducting Indium Tin Oxide Films with High Mobility and Figure of Merit by RF-Magnetron Sputtering. J. Electron. Mater. 48, 7192–7202 (2019). https://doi.org/10.1007/s11664-019-07533-8
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DOI: https://doi.org/10.1007/s11664-019-07533-8