Abstract
Codoping zinc (Zn) and tin (Sn) in forming quartenary acceptor/donor codoped gallium nitride thin films using reactive sputtering technique under a cermet target is presented in this study. The purpose of codoping in GaN is to extend its electrical properties to a wider range through defect engineering. There are few reports on the Zn/Sn codoped GaN thin films by chemical or physical processes at this stage. To develop the acceptor/donor codoped GaN, this work was focused on the influence of process parameters of deposition temperatures and RF sputter power on the film properties in order to explore the defect behaviors. RF sputter power showed a strong effect on the performance of p-type Zn/Sn-GaN films, with the hole concentration in the range of 9.5 × 1012–5.1 × 1017 cm−3, electrical conductivity of 1.5 × 10−6–1.1 S cm−1, and optical band gap of 2.92–3.22 eV. On the other hand, the effect of deposition temperature on properties was not noticeable.
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This work was supported by the Ministry of Science and Technology of the Republic of China under Grant Nos. MOST 104-2221-E-011-169-MY3 and MOST 106-3111-Y-042A-093.
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Kuo, DH., Liu, YT. & Jan, DJ. Processing and Property Characterization of Zn Acceptor/Sn Donor Codoped Gallium Nitride Films Prepared by Reactive Sputtering with a Cermet Target. J. Electron. Mater. 47, 7420–7428 (2018). https://doi.org/10.1007/s11664-018-6682-y
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DOI: https://doi.org/10.1007/s11664-018-6682-y