Abstract
Generally, semiconductors such as SnO2, ZnO, and Fe2O3 are mostly used for gas detection. However, low sensitivity and high operating temperature limit their optoelectronic application, hence the need for viable alternative semiconductors. Vanadium pentoxide (V2O5) was selected for this study because of its layered structure and different valence states. V2O5 nanostructures were deposited on preheated glass substrates using the spray pyrolysis technique. Structural and morphological properties of the V2O5 nanoparticles were studied using x-ray diffraction (XRD) analysis and field-emission scanning electron microscopy (FESEM). The results reveal an orthorhombic structure with preferred orientation along (001) plane and average grain size of 27.179 nm. A V2O5/SiO2/Si gas sensor device was fabricated by depositing the V2O5 nanostructures on oxidized p-type silicon substrate. The current–voltage (I–V) characteristic and response of the sensor to different concentrations of ethanol and acetone gases at different operating temperatures were investigated. The light-enhanced sensor response was also studied under illumination from a green laser source. The sensing mechanism for the V2O5 nanostructures with and without illumination was also determined. The sensitivity of the V2O5/SiO2/Si gas sensor to ethanol and acetone was higher at low operating temperatures (40°C to 50°C). The gas sensor was more sensitive to ethanol than acetone at room temperature under both dark and illumination conditions. The results also indicated higher sensitivity under light illumination compared with dark conditions. In addition, the fabricated sensor exhibited faster response/recovery time for ethanol (43.493 μs/195.42 μs) than acetone (43.2001 μs/214.17 μs) at exposure duration of 10 min. Therefore, the application of V2O5 nanostructures is promising for detection of both acetone and (particularly) ethanol at low operating temperatures.
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Abbas, T.AH. Light-Enhanced Vanadium Pentoxide (V2O5) Thin Films for Gas Sensor Applications. J. Electron. Mater. 47, 7331–7342 (2018). https://doi.org/10.1007/s11664-018-6673-z
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DOI: https://doi.org/10.1007/s11664-018-6673-z