Abstract
We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from − 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin–orbit effect.
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Acknowledgements
The financial supports from the Brazilian Agencies FAPESP (Grants: 16/10668-7 and 12/24055-6) and CNPq and from the UK Engineering and Physical Sciences Research Council, are gratefully acknowledged.
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Galeti, H.V.A., Galvão Gobato, Y., Brasil, M.J.S.P. et al. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes. J. Electron. Mater. 47, 1780–1785 (2018). https://doi.org/10.1007/s11664-018-6065-4
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DOI: https://doi.org/10.1007/s11664-018-6065-4