Abstract
A measurement system for thermal impedance (Z th) was developed to evaluate the transient thermal performance of sintered nanoscale silver joints. Five different temperature profiles for low-temperature sintering were evaluated by Z th measurements of the joints. The thermal impedance of the sintered samples was altered by the different sintering conditions. Samples that underwent heating profiles with a separate drying stage offered lower thermal impedance than those sintered directly. Exerting pressure of more than 1 MPa during sintering insignificantly improved the thermal impedance. Besides, the impedance could be lowered by extending the holding time of the drying stage and applying pressure as low as 1 MPa during sintering. Characterization of microstructures of the sintered layers was performed by scanning electron microscopy (SEM). With more cracks present, the thermal impedance of the chip joints increased. The presence of cracks was possibly attributed to fast drying or the lack of a drying step.
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References
U. Scheuermann and P. Beckedahl, CIPS 2008 Proceedings (2008).
E. Schulze, C. Mertens, and A. Lindemann, PCIM Proceedings (2009), p. 217.
J. Rudzki, C. Mertens, and R. Sittig, IEEE PESC Proceedings (2004), p. 4178.
G-Q. Lu, G. Lei, and J.N. Calata, U.S. patent 0162557 (2009).
Y.H. Mei, G.-Q. Lu, X. Chen, S. Luo, and D. Ibitayo, IEEE Trans. Device Mater. Reliab. 11, 2 (2010).
Y.H. Mei, G.-Q. Lu, X. Chen, and S.F. Luo, IEEE Trans. Device Mater. Reliab. 11, 2 (2010).
Y.H. Mei, G.-Q. Lu, X. Chen, C. Gang, S. Luo, and D. Ibitayo, J. Electron. Mater. 40, 10 (2011).
D.J. Yu, X. Chen, G. Chen, G.-Q. Lu, and Z.Q. Wang, Mater. Des. 30, 10 (2009).
J.G. Bai, Z.Z. Zhang, J.N. Calata, and G.-Q. Lu, IEEE Trans. Compon. Packag. Technol. 29, 3 (2006).
J.G. Bai and G.-Q. Lu, IEEE Trans. Device Mater. Reliab. 6, 3 (2006).
J.N. Calata, T.G. Lei, and G.-Q. Lu, Int. J. Mater. Prod. Technol. 34, 94 (2009).
G-Q. Lu, J.N. Calata, G. Lei, and X. Chen, EuroSimE Proceedings (2007), p. 609.
G-Q. Lu, J.N. Calata, and T.G. Lei, CIPS Proceedings (2008), p. 121.
T. Wang, X. Chen, G.-Q. Lu, and G.-Y. Lei, J. Electron. Mater. 36, 10 (2007).
T.G. Lei, J.N. Calata, G.-Q. Lu, X. Chen, and S. Luo, IEEE Trans. Compon. Packag. Technol. 33, 1 (2010).
D. Xu, H. Lu, L. Huang, S. Azuma, M. Kimata, and R. Uchida, IEEE Trans. Ind. Appl. 38, 5 (2002).
M. Fukuda, Reliability and Degradation of Semiconductor Lasers and LEDs (Norwood: Artech House, 1991).
T. Yanagisawa, Microelectron. Reliab. 38, 10 (1998).
T.G. Lei, J. Calata, S.F. Luo, G-Q. Lu, and X. Chen, Key Eng. Mater. 353–358 (2007).
K. Chu, C. Jia, X. Liang, H. Chen, and H. Guo, Mater. Des. 30, 9 (2009).
X. Cao, T. Wang, K.D.T. Ngo, and G-Q. Lu, IEEE Trans. Compon. Packag. Manuf. Technol. 1, 4 (2011).
G. Chen, D. Han, Y.-H. Mei, X. Cao, T. Wang, X. Chen, and G-Q. Lu, IEEE Trans. Device Mater. Reliab. 12, 1 (2012).
X. Cao, T. Wang, G-Q. Lu, and K. D. T. Ngo, IPEC Proceedings (2010), p. 546.
L. Xue, P. Keblinski, S.R. Phillpot, S.U.-S. Choi, and J.A. Eastman, J. Chem. Phys. 118, 1 (2003).
http://www.nbetech.com/. Accessed May 14th, 2012.
J.G. Bai, J.N. Calata, and G.-Q. Lu, IEEE Trans. Electron. Packag. Manuf. 30, 4 (2007).
T. Wang, X. Chen, G.-Q. Lu, and G.-Y. Lei, J. Electron. Mater. 36, 10 (2007).
www.care-mc.com/. Accessed May 14th, 2012.
Z. Jakopovic, Z. Bencic, and F. Kolonic, ISIE Proceedings (1999), p. 574.
S.M. Sze, Physics of Semiconductor Devices (New York: Wiley, 1981).
B.J. Baliga, Fundamentals of Power Semiconductor Devices (New York: Springer, 2008).
J. Zarebski and K. Górecki, ICIE Proceedings (1993), p. 111.
H. Conrad, Z. Guo, Y. Fahmy, and D. Yang, J. Electron. Mater. 28, 9 (1999).
X. Li, X. Chen, and G-Q. Lu, J. Electron. Packag. 132, 3 (2010).
K.-S. Kim, M. Haga, and K. Suganuma, J. Electron. Mater. 32, 12 (2003).
W. Dong, Y. Shi, Y. Lei, Z. Xia, and F. Guo, J. Electron. Mater. 38, 9 (2009).
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Mei, Y., Wang, T., Cao, X. et al. Transient Thermal Impedance Measurements on Low-Temperature-Sintered Nanoscale Silver Joints. J. Electron. Mater. 41, 3152–3160 (2012). https://doi.org/10.1007/s11664-012-2233-0
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DOI: https://doi.org/10.1007/s11664-012-2233-0