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The online version of the original article can be found under doi:10.1007/s11664-012-2050-5.
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Burke, P.G., Buehl, T.E., Pernot, G. et al. Erratum to: Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature. J. Electron. Mater. 41, 3247 (2012). https://doi.org/10.1007/s11664-012-2224-1
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DOI: https://doi.org/10.1007/s11664-012-2224-1