Abstract
An important parameter for heteroepitaxial material systems is the critical thickness h c. To date, for the material system ZnTe on GaSb, agreement between experimental and theoretical values of h c has been poor. In this paper, we present results of an experimental study of h c for ZnTe layers on GaSb(211)B substrates based on a combination of high-resolution x-ray diffraction and photoluminescence measurements. Our experimentally determined h c value of 350 nm to 375 nm agrees well with the models of Cohen-Solal and Dunstan.
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Chai, J., Noriega, O.C., Dinan, J.H. et al. Critical Thickness of ZnTe on GaSb(211)B. J. Electron. Mater. 41, 3001–3006 (2012). https://doi.org/10.1007/s11664-012-2120-8
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DOI: https://doi.org/10.1007/s11664-012-2120-8