Mg2Si0.5Sn0.5-xGaSb (0 ≤ x ≤ 0.15) solid solutions were synthesized by a B2O3 flux method followed by hot pressing. X-ray power diffraction analysis and scanning electron microscopy observations confirm that single-phase samples were obtained. The lattice constant monotonically increases with increasing GaSb content. It was found that the Seebeck coefficients showed weak temperature dependency after alloying with GaSb, being enhanced at high temperatures. The electrical conductivity increases while the lattice thermal conductivity decreases with increasing GaSb content. A maximum dimensionless figure of merit of 0.47 was obtained at 660 K for the sample with x = 0.08, mainly due to its high electrical conductivity.
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References
T.M. Tritt, Science 272, 1276 (1996).
F.G. Disalvo, Science 285, 703 (1999).
J.J. Shen, T.J. Zhu, X.B. Zhao, S.N. Zhang, S.H. Yang, and Z.Z. Yin, Energy Environ. Sci. 3, 1519 (2010).
J.P. Heremans, V. Jovovic, E.S. Toberer, A. Saramat, K. Kurosaki, A. Charoenphakdee, S. Yamanaka, and G.J. Snyder, Science 321, 554 (2008).
V.K. Zaitsev, M.I. Fedorov, E.A. Gurieva, I.S. Eremin, P.P. Konstantinov, A.Y. Samunin, and M.V. Vedernikov, Phys. Rev. B 74, 045207 (2006).
Q. Zhang, J. He, T.J. Zhu, S.N. Zhang, X.B. Zhao, and T.M. Tritt, Appl. Phys. Lett. 93, 102109 (2008).
X.H. Ji, J. He, Z. Su, N. Gothard, and T.M. Tritt, J. Appl. Phys. 104, 034907 (2008).
S.N. Zhang, T.J. Zhu, S.H. Yang, C. Yu, and X.B. Zhao, Acta Mater. 58, 4160 (2010).
S.R. Brown, S.M. Kauzlarich, F. Gascoin, and G.J. Snyder, Chem. Mater. 18, 1873 (2006).
K.F. Hsu, S. Loo, F. Guo, W. Chen, J.S. Dyck, C. Uher, T. Hogan, E.K. Polychroniadis, and M.G. Kanatzidis, Science 303, 818 (2004).
S.H. Yang, T.J. Zhu, T. Sun, S.N. Zhang, X.B. Zhao, and J. He, Nanotechnology 19, 245707 (2008).
J. Tani and H. Kido, Intermetallics 16, 418 (2008).
J. Tani and H. Kido, J. Alloys Compd. 466, 335 (2008).
M.I. Fedorov, V.K. Zaitsev, I.S. Eremin, E.A. Gurieva, A.T. Burkov, P.P. Konstantinov, M.V. Vedernikov, A.Yu. Samunin, G.N. Isachenko, and A.A. Shabaldin, Phys. Solid State 48, 1486 (2006).
G.S. Nolas, D. Wang, and M. Beekman, Phys. Rev. B 76, 235204 (2007).
M. Riffel and J. Schilz. Proc. 15th Int. Conf. on Thermoelectrics, 1996, p. 133.
Q. Zhang, J. He, X.B. Zhao, S.N. Zhang, T.J. Zhu, H. Yin, and T.M. Tritt, J. Phys. D Appl. Phys. 41, 185103 (2008).
H.L. Gao, T.J. Zhu, X.X. Liu, L.X. Chen, and X.B. Zhao, J. Mater. Chem. 21, 5933 (2011).
A. Kato, T. Yagi, and N. Fukusako, J. Phys. Condens. Matter 21, 205801 (2009).
S. Kasap, Principles of Electrical Engineering Materials and Devices, 2nd ed. (New York: McGraw Hill, 1997).
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Du, Z.L., Jiang, G.Y., Chen, Y. et al. Effect of GaSb Addition on the Thermoelectric Properties of Mg2Si0.5Sn0.5 Solid Solutions. J. Electron. Mater. 41, 1222–1226 (2012). https://doi.org/10.1007/s11664-011-1886-4
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DOI: https://doi.org/10.1007/s11664-011-1886-4