Abstract
We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[PbCd]+-V 2−Cd ]−. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (VCd), and a deep trap at around 1.1 eV.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
C. Szeles, Phys. Stat. Sol. (b) 241, 783 (2004).
R.B. James, T.E. Schlesinger, J. Lund, and M. Schieber, Semiconductors and Semimetals, Vol. 43 (New York: Academic, 1997), p. 335.
M. Schieber, T.E. Schlesinger, R.B. James, H. Hermon, H. Yoon, and M. Goorsky, J. Cryst. Growth 2082, 237 (2002).
R. Gul, A.E. Bolotnikov, K.H. Kim, R. Rodriguez, K. Keeter, Z. Li, G. Gu, and R.B. James, J. Electron. Mater. 40, 274 (2011).
Z. Li, Nucl. Instrum. Meth. A 403, 399 (1998).
A. Zappettini, M. Zha, M. Pavesi, and L. Zanotti, J. Cryst. Growth 307, 283 (2007).
E. Saucedo, L. Fornaro, N.V. Sochinskii, A. Cuña, V. Corregidor, D. Granados, and E. Diéguez, IEEE Trans. Nucl. Sci. 51, 3105 (2004).
H. Elhadid, J. Franc, P. Moravec, P. Hoschl, and M. Fiederle, Semicond. Sci. Technol. 22, 537 (2007).
A.E. Bolotnikov, G.S. Camarda, G.A. Carini, Y. Cui, K.T. Kohman, L. Li, M.B. Salomon, and R.B. James, IEEE Trans. Nucl. Sci. 54, 821 (2007).
A.V. Savitskya, M.I. Ilashchuka, O.A. Parfenyuka, K.S. Ulyanytskya, V.R. Buracheka, R. Ciach, Z. Swiatekb, and Z. Kuznickic, Thin Solid Films 361–362, 203 (2000).
R. Gul, K.H. Kim, A.E. Bolotnikov, G.S. Carmarda, G. Yang, A. Hossain, Y. Cui, and R.B. James (unpublished).
E. Saucedo, C.M. Ruiz, V. Bermúdez, E. Dieguez, E. Gombia, A. Zappettini, A. Baraldi, and N.V. Sochinskii, J. Appl. Phys. 100, 104901 (2006).
C.H. Park and D.J. Chadi, Phys. Rev. Lett. 75, 1135 (1995).
K.H. Kim, R. Gul, V. Carcelen, A.E. Bolotinkov, G.S. Carmarda, G. Yang, A. Hossain, Y. Cui, R.B. James, J. Hong, and S.U. Kim, J. Cryst. Growth 312, 781 (2010).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Gul, R., Keeter, K., Rodriguez, R. et al. Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements. J. Electron. Mater. 41, 488–493 (2012). https://doi.org/10.1007/s11664-011-1802-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-011-1802-y