Abstract
GaSb nanowires were synthesized on c-plane sapphire substrates by gold-mediated vapor–liquid–solid (VLS) growth using a metalorganic chemical vapor deposition process. A narrow process window for GaSb nanowire growth was identified. Chemical analysis revealed variations in the catalyst composition which were explained in terms of the Au-Ga-Sb ternary phase diagram and suggest that the VLS growth mechanism was responsible for the nanowire growth. The nominally undoped GaSb nanowires were determined to be p-type with resistivity on the order of 0.23 Ω cm. The photoluminescence was found to be highly dependent on the V/III ratio, with an optimal ratio of unity.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
W. Xu, A. Chin, L. Ye, C.-Z. Ning, and H. Yu, SPIE Proceedings on Electrical and optical characterization of individual GaSb nanowires (San Jose, 2009).
A.H. Chin, S. Vaddiraju, A.V. Maslov, C.Z. Ning, M.K. Sunkara, and M. Meyyappan, Appl. Phys. Lett. 88, 163115 (2006).
N. Mingo and D.A. Broido, Phys. Rev. Lett. 93, 246106 (2004).
P.S. Dutta, H.L. Bhat, and V. Kumar, J. Appl. Phys. 81, 5821 (1997).
R.M. Biefeld, Mater. Sci. Eng. R Rep. 36, 105 (2002).
A. Lugstein, J. Bernardi, C. Tomastik, and E. Bertagnolli, Appl. Phys. Lett. 88, 163114 (2006).
S. Vaddiraju, M. Sunkara, A. Chin, C. Ning, and G. Dholakia, J. Phys. Chem. C 111, 7339 (2007).
Y.N. Guo, J. Zou, M. Paladugu, H. Wang, Q. Gao, H.H. Tan, and C. Jagadish, Appl. Phys. Lett. 89, 231917 (2006).
M. Jeppsson, K. Dick, H. Nilsson, N. Skold, J. Wagner, P. Caroff, and L.-E. Wernersson, J. Cryst. Growth 310, 5119 (2008).
M. Jeppsson, K. Dick, J. Wagner, P. Caroff, K. Deppert, L. Samuelson, and L.-E. Wernersson, J. Cryst. Growth 310, 4115 (2008).
P.A. Smith, C.D. Nordquist, T.N. Jackson, T.S. Mayer, B.R. Martin, J. Mbindyo, and T.E. Mallouk, Appl. Phys. Lett. 77, 1399 (2000).
J.A. Robinson and S.E. Mohney, J. Appl. Phys. 98, 033703 (2005).
X. Weng, R.A. Burke, E.C. Dickey, and J.M. Redwing, J. Cryst. Growth 312, 514 (2010).
A. Subekti, E.M. Goldys, M.J. Paterson, K. Drozdowicz-Tomsia, and T.L. Tansley, J. Mater. Res. 14, 1238 (1999).
T. Koljonen, M. Sopanen, H. Lipsanen, and T. Tuomi, J. Electron. Mater. 24, 1691 (1995).
A. Subekti, E.M. Goldys, and T.L. Tansley, Conference on Growth of Gallium Antimonide (GaSb) by Metalorganic Chemical Vapour Deposition (IEEE, 1997), pp. 426–429.
F. Pascal, F. Delannoy, J. Bougnot, L. Gouskov, G. Bougnot, P. Grosse, and J. Kaoukab, J. Electron. Mater. 19, 187 (1990).
M.K. Rathi, B.E. Hawkins, and T.F. Kuech, J. Cryst. Growth 296, 117 (2006).
A.I. Persson, M.W. Larsson, S. Stenstrom, B.J. Ohlsson, L. Samuelson, and L.R. Wallenberg, Nat. Mater. 3, 677 (2004).
C.T. Tsai and R.S. Williams, J. Mater. Res. 1, 352 (1986).
W.E. Lui and S.E. Mohney, J. Electron. Mater. 32, 1090 (2003).
H. Okamoto and T.B. Massalski, eds., Phase Diagrams of Binary Gold Alloys (Materials Park, OH: ASM International, 1987).
H. Yasuda and H. Mori, J. Cryst. Growth 237–239, 234 (2002).
H. Yasuda, M. Takeguchi, K. Mitsuishi, M. Tanaka, M. Song, K. Furuya, and H. Mori, J. Electron. Microsc. 51, S215 (2002).
M. Ohring, Materials Science of Thin Films, 2nd ed. (New York: Academic, 2002).
S.C. Hardy, J. Cryst. Growth 71, 602 (1985).
V.K. Kumikov and K.B. Khokonov, J. Appl. Phys. 54, 1346 (1983).
A. Tegetmeier, A. Croll, A. Danilewsky, and K.W. Benz, J. Cryst. Growth 166, 651 (1996).
V.A. Nebol’sin and A.A. Shchetinin, Inorg. Mater. 39, 899 (2003).
Y.J. Van Der Meulen, J. Phys. Chem. Solids 28, 25 (1967).
W.G. Hu, Z. Wang, B.F. Su, Y.Q. Dai, S.J. Wang, and Y.W. Zhao, Phys. Lett. A 332, 286 (2004).
K. Yamamoto, H. Asahi, K. Inoue, K. Miki, X.F. Liu, D. Marx, A.B. Villaflor, K. Asami, and S. Gonda, J. Cryst. Growth 150, 853 (1995).
P.W. Chye, I. Lindau, P. Pianetta, C.M. Garner, C.Y. Su, and W.E. Spicer, Phys. Rev. B 18, 5545 (1978).
P.W. Chye, T. Sukegawa, I.A. Babalola, H. Sunami, P. Gregory, and W.E. Spicer, Phys. Rev. B 15, 2118 (1977).
W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, and I. Lindau, J. Vac. Sci. Technol. 16, 1422 (1979).
Acknowledgements
This work was supported by the National Science Foundation under Grant No. ECS-0093742 and The Pennsylvania State University Materials Research Science and Engineering Center (MRSEC) on Nanoscale Science. Additional support was provided by Illuminex Corp. under an NSF Phase I STTR program (0740336). The TEM work was performed in the electron microscopy facility of the Materials Characterization Laboratory (MCL) at the Pennsylvania State University.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Burke, R.A., Weng, X., Kuo, MW. et al. Growth and Characterization of Unintentionally Doped GaSb Nanowires. J. Electron. Mater. 39, 355–364 (2010). https://doi.org/10.1007/s11664-010-1140-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-010-1140-5