The authors have investigated by deep level transient spectroscopy the electron traps introduced in n-type Ge during sputter deposition of Au Schottky contacts. They have compared the properties of these defects with those introduced in the same material during high-energy electron irradiation. They found that sputter deposition introduces several electrically active defects near the surface of Ge. All these defects have also been observed after high-energy electron irradiation. However, the main defect introduced by electron irradiation, the V-Sb center, was not observed after sputter deposition. Annealing at 250°C in Ar removed the defects introduced during sputter deposition.
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Acknowledgements
The authors gratefully acknowledge financial support of the South African National Research Foundation. The Laplace DLTS software and hardware used in the research was kindly provided by A.R. Peaker (Centre for Electronic Materials Devices and Nanostructures, University of Manchester) and L. Dobaczewski (Institute of Physics, Polish Academy of Sciences).
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Auret, F., Coelho, S., Meyer, W. et al. Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge. J. Electron. Mater. 36, 1604–1607 (2007). https://doi.org/10.1007/s11664-007-0245-y
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DOI: https://doi.org/10.1007/s11664-007-0245-y