Single-phase GaGdN and GaGdN:Si films were grown on sapphire substrates by gas source molecular beam epitaxy using solid Gd, Ga, and Si sources and active nitrogen derived from a RF nitrogen plasma source. The undoped films were highly resistive films but became conductive with the addition of Si. Superconducting quantum interference device magnetometry indicated room-temperature ferromagnetism in both types of materials. Structural defects had a strong influence on the magnetic ordering of the material, as seen in a drastic reduction of magnetic moment with degrading crystalline quality. Magnetization of the codoped film increased with Si content, reaching levels higher than that of the undoped material. The Gd-doped AlN films grown in a similar fashion also displayed Curie temperatures above room temperature.
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The work at the University of Florida was supported by the Army Research Office under Contract No. W911-NF-0410296. The help of Kerry Seibin, UF MAIC facility, with the TEM analysis is appreciated.
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Hite, J., Frazier, R., Davies, R. et al. Effect of Si Co Doping on Ferromagnetic Properties of GaGdN. J. Electron. Mater. 36, 391–396 (2007). https://doi.org/10.1007/s11664-006-0040-1
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DOI: https://doi.org/10.1007/s11664-006-0040-1