Abstract
Electroluminescence (EL) from PbTe pn homojunctions with a highly Bi-doped n-type emission layer with a concentration of NBi > 1019 cm−3, grown by the temperature difference method (TDM) under controlled-Te vapor pressure has shown a positive shift of the peak-photon energy, which coincides with the model that Bi atoms act as both donors and acceptors, and they make the nearest lattice-site or very close donor-acceptor (DA) pairs. Broad-contact pn junctions with highly Bi-doped layers easily cause laser emission compared to the difficulty in the lasing operation of undoped pn junctions, which suggests that the nearest lattice-site Bi-Bi DA pairs act as strong radiative centers in PbTe.
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Tamura, W., Yasuda, A., Suto, K. et al. Electroluminescence and lasing properties of highly Bi-doped PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure. J. Electron. Mater. 32, 39–42 (2003). https://doi.org/10.1007/s11664-003-0235-7
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DOI: https://doi.org/10.1007/s11664-003-0235-7