Abstract
The strained Si techique has been widely adopted in the high-speed and high-performance devices and circuits. Based on the valence band E-k relations of strained Si/(111)Si1−x Ge x , the valence band and hole effective mass along the [111] and [−110] directions were obtained in this work. In comparison with the relaxed Si, the valence band edge degeneracy was partially lifted, and the significant change was observed band structures along the [111] and [−110] directions, as well as in its corresponding hole effective masses with the increasing Ge fraction. The results obtained can provide valuable references to the investigation concerning the Si-based strained devices enhancement and the conduction channel design related to stress and orientation.
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Song, J., Zhang, H., Hu, H. et al. Valence band structure of strained Si/(111)Si1−x Ge x . Sci. China Phys. Mech. Astron. 53, 454–457 (2010). https://doi.org/10.1007/s11433-010-0093-2
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DOI: https://doi.org/10.1007/s11433-010-0093-2