Abstract
In this paper, we investigate the continuous-wave lasing characteristics of Ho :GdVO4 crystal under diode-pumping conditions. Using a 1.0 at.%-doped crystal, we obtain the maximum output power equal to 9.0 W at 2047.9 nm, with an absorbed pump power of 28.2 W. The slope efficiency and optical efficiency measured with respect to the absorbed pump power are 50.7% and 31.9%, respectively. In addition, we estimate the beam quality factor at the maximum output level to be about 1.8.
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Wu, J., Duan, X., Ding, Y. et al. Continuous-Wave Lasing Characteristics of Ho :GdVO4 Crystal Under Diode-Pumping Architecture. J Russ Laser Res 45, 184–188 (2024). https://doi.org/10.1007/s10946-024-10202-9
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DOI: https://doi.org/10.1007/s10946-024-10202-9