Abstract
Using InSb/GaSb semiconductor quantum dots, we demonstrate the lateral spatial resolution of scattering apertureless near-field microscope equal to 10 – 15 nm at a wavelength of λ = 10.7 μm provided by a single-mode CO2 laser. The measurement conditions make it possible to undoubtedly exclude any artifacts caused by the sample topography and other similar factors. We identify the strongly localized in-plane near-field signal with a two-dimensional electron gas clamped on the InSb/GaSb interface of quantum dots.
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Kazantsev, D.V., Klekovkin, A.V., Minaev, I.I. et al. An Apertureless Scanning Near-Field Optical Microscope Probe with a Lateral Resolution of 10 – 15 nm Observed with a Semiconductor Structure. J Russ Laser Res 44, 656–662 (2023). https://doi.org/10.1007/s10946-023-10174-2
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DOI: https://doi.org/10.1007/s10946-023-10174-2