Abstract
We propose the quaternary AlInGaN last quantum barrier (LQB) structure to improve the performance of deep-ultraviolet (DUV) laser diodes (LDs). Here, we investigate three LQB structures – Al0.63In0.03Ga0.34N LQB, Al0.65In0.03Ga0.32N LQ band, and Al0.68In0.03Ga0.29N LQB. We find that the Al0.68In0.03Ga0.29N LQB structure significantly reduces the electron leakage in the p-region, improves the carrier injection efficiency in the active region, and increases the stimulated radiation recombination rate of the DUV LDs. The simulation results indicate that the threshold current and threshold voltage decrease from 50.93 mA and 4.70 V for the Al0.63In0.03Ga0.34N LQB structure to 42.47 mA and 4.63 V for the Al0.68In0.03Ga0.29N LQB structure, respectively. At an injection current of 100 mA, the slope efficiency increases to 1.12 W/A. Compared with the conventional ternary AlGaN LQB structure, the quaternary AlInGaN LQB structure significantly improves the performance of the DUV LDs, which is crucial for the development of the DUV LDs.
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J.-S. Park, J. K. Kim, J. Cho, and T.-Y. Seong, ECS J. Solid State Sci. Technol., 6, Q42-Q52 (2017); DOI: https://doi.org/10.1149/2.0111704jss
T. Kyono, H. Hirayama, K. Akita, et al., J. Appl. Phys., 99, 114509 (2006); DOI: https://doi.org/10.1063/1.2200749
H. Hirayama, J. Appl. Phys., 97, 091101 (2005); DOI: https://doi.org/10.1063/1.1899760
M. Kneissl, T.-Y. Seong, J. Han, and H. Amano, Nat. Photonics, 13, 233 (2019); DOI: https://doi.org/10.1038/s41566-019-0359-9
Z. Xing, F. Wang, Y. Wang, et al., Opt. Express, 30, 36446 (2022); DOI: https://doi.org/10.1364/OE.469338
S. U. Khan, S. M. Nawaz, M. I. Niass, et al., J. Russ. Laser Res., 43, 370 (2022); DOI: https://doi.org/10.1007/s10946-022-10061-2
S. M. Nawaz, M. I. Niass, Y. Wang, et al., Superlattices Microstruct., 145, 106643 (2020); DOI: https://doi.org/10.1016/j.spmi.2020.106643
Y. Xu, P. Zhang, A. Zhang, et al., Eur. Phys. J. D, 76, 183 (2022); DOI: https://doi.org/10.1140/epjd/s10053-022-00506-3
L. Jia, M. Wang, A. Zhang, et al., “Structure optimization of deep ultraviolet laser diodes with superlattice electron blocking layer,” in: 2021 9th International Symposium on Next Generation Electronics (ISNE), Changsha, China (2021), p. 1; DOI: https://doi.org/10.1109/ISNE48910.2021.9493641
H. Hirayama, Y. Enomoto, A. Kinoshita, et al., Appl. Phys. Lett., 80, 1589 (2002); DOI: https://doi.org/10.1063/1.1456951
S.-M. Zeng, G.-H. Fan, S.-W. Zheng, et al., Appl. Phys. A, 119, 971 (2015); DOI: https://doi.org/10.1007/s00339-015-9053-z
T. Jamil, M. Usman, S. Malik, and H. Jamal, Appl. Phys. A, 127, 397 (2021); DOI: https://doi.org/10.1007/s00339-021-04559-w
S. Tanaka, Y. Ogino, K. Yamada, et al., Appl. Phys. Lett., 118, 163504 (2021); DOI: https://doi.org/10.1063/5.0046224
M. N. Sharif, M. Ajmal Khan, Q. Wali, et al., Opt. Laser Technol., 152, 108156 (2022); DOI: https://doi.org/10.1016/j.optlastec.2022.108156
S. Nakamura and G. Fasol, The Blue Laser Diode: GaN-Based Light Emitters and Lasers, Springer Berlin, Heidelberg (2013).
M. N. Sharif, M. I. Niass, J. J. Liou, et al., Semicond. Sci. Technol., 36, 055017 (2021); DOI: https://doi.org/10.1088/1361-6641/abeff6
M. N. Sharif, M. I. Niass, J. J. Liou, et al., Superlattices Microstruct., 158, 107022 (2021); DOI: https://doi.org/10.1016/j.spmi.2021.107022
M. I. Niass, M. N. Sharif, Y. Wang, et al., J. Semicond., 40, 122802 (2019).
M. N. Sharif, M. I. Niass, J. J. Liou, et al., Semicond. Sci. Technol., 36, 055017 (2021); DOI: https://doi.org/10.1088/1361-6641/abeff6
A. Zhang, P. Zhang, Y. Wang, et al., “Optimization of deep ultraviolet laser diode using thickness gradient multiple-quantum-well,” in: 2021 9th International Symposium on Next Generation Electronics (ISNE), Changsha, China (2021), p. 1; DOI: https://doi.org/10.1109/ISNE48910.2021.9493590
Y.-F. Wang, M. I. Niass, F. Wang, and Y.-H. Liu, Chin. Phys. B, 29, 017301 (2020); DOI: https://doi.org/10.1088/1674-1056/ab592c
Z.-Q. Xing, Y.-J. Zhou, Y.-H. Liu, and F. Wang, Chin. Phys. Lett., 37, 027302 (2020); DOI: https://doi.org/10.1088/0256-307X/37/2/027302
Y.-F. Wang, M. I. Niass, F. Wang, and Y.-H. Liu, Chin. Phys. Lett., 36, 057301 (2019); DOI: https://doi.org/10.1088/0256-307X/36/5/057301
Y. Xing, D.-G. Zhao, D.-S. Jiang, et al., Chin. Phys. B, 27, 028101 (2018); DOI: https://doi.org/10.1088/1674-1056/27/2/028101
P.-M. Tu, C.-Y. Chang, S.-C. Huang, et al., Appl. Phys. Lett., 98, 211107 (2011); DOI: https://doi.org/10.1063/1.3591967
N. U. Islam, M. Usman, S. Khan, et al., Optik, 248, 168212 (2021); DOI: https://doi.org/10.1016/j.ijleo.2021.168212
X. Chen, Y. A. Yin, D. Wang, and G. Fan, J. Electron. Mat., 48, 2572 (2019); DOI: https://doi.org/10.1007/s11664-019-07001-3
T. Takano, S. Fujikawa, Y. Kondo, and H. Hirayama, Phys. Status Solidi C, 5, 2102 (2008); DOI: https://doi.org/10.1002/pssc.200778455
S. Fujikawa, H. Hirayama, T. Takano, and K. Tsubaki, Phys. Status Solidi C, 6(S2), S784 (2009); DOI: https://doi.org/10.1002/pssc.200880955
M. Usman and S. Malik, ECS J. Solid State Sci. Technol., 11, 076004 (2022); DOI: https://doi.org/10.1149/2162-8777/ac7f58
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Yin, M., Zhang, A., Sang, X. et al. AlGaN-Based Deep-Ultraviolet Laser Diodes with Quaternary AlInGaN Last Quantum Barrier. J Russ Laser Res 44, 339–347 (2023). https://doi.org/10.1007/s10946-023-10139-5
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DOI: https://doi.org/10.1007/s10946-023-10139-5