Abstract
By calculating the heterojunction band alignment of GeSn/SiGeSn, a Ge0.9Sn0.1/Si0.14Ge0.71Sn0.15 multi-quantum-well laser was designed, where three Ge0.9Sn0.1 layers act as wells separated by three Si0.14Ge0.71Sn0.15 layers as barriers. The maximum TE gain reaches 7000 cm−1 at 0.5 eV, and the maximum TM gain reaches 5500 cm−1 at 0.52 eV. The modal gain of the Ge0.9Sn0.1/Si0.14Ge0.71Sn0.15 multi-quantum-well laser we proposed and designed can reach 100 cm−1 with a current density of 5 kA/cm2. The result indicates that it is possible to obtain a Si-based laser.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
S. Su, B. Cheng, C. Xue, et al., Opt. Express, 19, 6400 (2011).
W. J. Yin, X. G. Gong, and S. H. Wei, Phys. Rev. B, 78, 161203 (2008).
V. R. D’Costa, Y. Y. Fang, J. Tolle, et al., Phys. Rev. Lett., 102, 107403 (2009).
J. Mathews, R. T. Beeler, J. Tolle, et al., Appl. Phys. Lett., 97, 221912 (2010).
R. Chen, H. Lin, Y. Huo, et al., Appl. Phys. Lett., 99, 181125 (2011).
M. Fukuda, T. Yamaha, T. Asano, et al., Mater. Sci. Semiconduct. Process., 70, 156 (2017).
X. Sun, J. Liu, L. C. Kimerling, et al., Appl. Phys. Lett., 95, 011911 (2009).
T. H. Cheng, C. Y. Ko, C. Y. Chen, et al., Appl. Phys. Lett., 96, 091105 (2010).
S. Su, B. Cheng, C. Xue, et al., Opt. Express, 19, 6400 (2011).
W. J. Yin, X. G. Gong, and S. H. Wei, Phys. Rev. B, 78, 161203 (2008).
M. Jaros, Phys. Rev. B, 37, 7112 (1988).
J. Ma, J. Zhang, X. Jia, et al., J. Russ. Laser Res., 38, 76 (2017).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Zhang, J., Ma, J. & Yang, Y. Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser. J Russ Laser Res 41, 98–103 (2020). https://doi.org/10.1007/s10946-020-09853-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10946-020-09853-1