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Investigation of in situ grown P-doped nc-SiOx: H thin film as the n layer for the application of thin film solar cell

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Abstract

As a key component layer of thin-film solar cell device, the property of n-layer significantly determines the photovoltaic performance. In this work, the phosphorous-doped hydrogenated nanocrystalline silicon oxide thin films are in situ prepared by plasma-enhanced chemical vapor deposition (PECVD) method at a low substrate temperature (150 °C), a mixture of He and Ar is applied as a dilution. A series of characterizations have been carried out for investigating the film properties. It is found that by adjusting He/Ar flow ratio, the structural and electrical properties are controllable, while a high conductivity of 2.08 S/cm can be achieved. Moreover, thin-film solar cells are prepared with the phosphorous-doped hydrogenated nanocrystalline silicon oxide thin films as the n layer, and the contribution of n layer on cell performance has been studied.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Authors and Affiliations

  1. Aviation Maintenance NCOs Academy, Air Force Engineering University, Xinyang, 464000, PR China

    Fu Genyi & Cai Wei

Authors
  1. Fu Genyi
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  2. Cai Wei
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Fu Genyi contributed toward conceptualization, methodology, writing, formal analysis, and review & editing; Cai Wei contributed toward investigation and resources.

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Correspondence to Fu Genyi.

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Genyi, F., Wei, C. Investigation of in situ grown P-doped nc-SiOx: H thin film as the n layer for the application of thin film solar cell. J Mater Sci: Mater Electron 35, 1739 (2024). https://doi.org/10.1007/s10854-024-13498-0

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  • DOI: https://doi.org/10.1007/s10854-024-13498-0

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