Abstract
Highly (100) preferred undoped and 1–5% Ni-doped Ba1−xSr x TiO3 (BST) thin films were deposited onto MgO (100) single crystal substrate at 750°C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol% Ni doped BST film is an effective candidate for high performance tunable device applications.
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Lim, MH., Kim, HS., Kim, NY. et al. Frequency and Voltage Dependent Dielectric Properties of Ni-doped Ba0.6Sr0.4TiO3 Thin Films. J Electroceram 13, 239–243 (2004). https://doi.org/10.1007/s10832-004-5105-z
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DOI: https://doi.org/10.1007/s10832-004-5105-z