Abstract.
The photoconductivity response time in Bi12SiO20 grows 3 orders of magnitude when the temperature changes from 350 to 200 K. We attribute this to the influence of shallow traps with activation energy 0.4 eV. For low temperatures, the time of holographic grating formation is determined by the time of shallow-level filling.
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Received: 29 October 1998 / Revised version: 18 December 1998 / Published online: 12 April 1999
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Korneev, N., Mayorga-Cruz, D. & Sánchez-Mondragón, J. Influence of shallow traps on holographic recording in Bi12SiO20 in the temperature range 200–350 K . Appl Phys B 68, 859–862 (1999). https://doi.org/10.1007/s003400050715
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DOI: https://doi.org/10.1007/s003400050715