4
as a host for neodymium has several advantages for diode pumping in comparison with other crystals. The absorption cross section of neodymium in GdVO4 is considerably stronger and broader than in YAG. This allows for the construction of very compact monolithical microchip lasers. In our paper, we report for the first time on a diode-pumped monolithical Nd3+([%at.]1.3):GdVO4 microchip laser at 1.06 μm. A maximum output power of 5 W is achieved. The temporal and the spectral emission properties are described. The beam propagation properties are studied in detail.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
Author information
Authors and Affiliations
Additional information
Received: 23 July 1998 / Revised version: 9 November 1998 / Published online: 24 February 1999
Rights and permissions
About this article
Cite this article
Wyss, C., Lüthy, W., Weber, H. et al. Performance of a diode-pumped 5 W Nd3+:GdVO4 microchip laser at 1.06 μm . Appl Phys B 68, 659–661 (1999). https://doi.org/10.1007/s003400050682
Issue Date:
DOI: https://doi.org/10.1007/s003400050682