2
interface upon irradiation of oxidized Si(100) and Si(111) samples with femtosecond laser pulses of nanojoule pulse energy at the wavelength of 780 nm (1.6 eV). We attribute this effect to a dc-field-induced SH contribution which results from the creation of new oxide traps by a photoinduced damage process. The damage process occurs, with a significantly lower efficiency, also under cw irradiation; the experimental results, however, rule out a thermal origin of the effect as well as a multiphoton effect.
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Received: 11 July 1997
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Cernusca, M., Heer, R. & Reider, G. Photoinduced trap generation at the Si-SiO2 interface . Appl Phys B 66, 367–370 (1998). https://doi.org/10.1007/s003400050402
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DOI: https://doi.org/10.1007/s003400050402