Abstract
We fabricated a highly efficient, broadband light emitting diode driven by an optical near field generated at the inhomogeneous domain boundary of a dopant in a homojunction bulk Si crystal and evaluated its performance. To fabricate this device, a forward current was made to flow through a Si p–n junction to anneal it. During this process, the device was irradiated with near-infrared light, producing stimulated-emission light using a two-step phonon-assisted process triggered by the optical near field, and the annealing rate was controlled in a self-organized manner. The device emitted light in a wide photon energy region of 0.73–1.24 eV (wavelength 1.00–1.70 μm). The total power of the emitted light with 11 W of electrical input power was as high as 1.1 W. The external power conversion efficiency of the emitted light was 1.3%, the differential external power conversion efficiency was 5.0%, the external quantum efficiency was 15%, and the differential external quantum efficiency was 40%. The dependency of the emitted light power density on the injected current density clearly showed a characteristic reflecting the two-step phonon-assisted transition process.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
T.P. Lee, C.A. Burus, A.G. Dentai, IEEE J. Quantum Electron. 17, 232 (1981)
R.A. Milano, P.D. Dapkus, G.E. Stillman, IEEE Trans. Electron Devices 29, 266 (1982)
U.S. Department of Health and Human Services, Public Health Service, National Institute of Health, National toxicology program: NTP technical report on the toxicology and carcinogenesis studies of indium phosphide (CAS No. 22398-80-7) in F344/N rats and B6C3F1 mice (inhalation studies), NTP TR 499 (2001)
K.D. Hirschman, L. Tysbekov, S.P. Duttagupta, P.M. Fauchet, Nature 384, 338 (1996)
Z.H. Lu, D.J. Lockwood, J.-M. Baribeau, Nature 378, 258 (1995)
L. Dal Negro, R. Li, J. Warga, S.N. Basu, Appl. Phys. Lett. 92, 181105 (2008)
T. Komoda, Nucl. Instrum. Methods Phys. Res., Sect. B, Beam Interact. Mater. Atoms 96, 387 (1995)
S. Yerci, R. Li, L. Dal Negro, Appl. Phys. Lett. 97, 081109 (2010)
S.K. Ray, S. Das, R.K. Singha, S. Manna, A. Dhar, Nanoscale Res. Lett. 6, 224 (2011)
M.A. Green, J. Zhao, A. Wang, P.J. Reece, M. Gal, Nature 412, 805 (2001)
T. Kawazoe, K. Kobayashi, S. Takubo, M. Ohtsu, J. Chem. Phys. 122, 024715 (2005)
S. Yukutake, T. Kawazoe, T. Yatsui, W. Nomura, K. Kitamura, M. Ohtsu, Appl. Phys. B, Lasers Opt. 99, 415 (2010)
T. Kawazoe, M. Ohtsu, Y. Inao, R. Kuroda, J. Nanophotonics 1, 011595 (2007)
T. Yatsui, K. Hirata, W. Nomura, Y. Tabata, M. Ohtsu, Appl. Phys. B 93, 55 (2008)
T. Kawazoe, H. Fujiwara, K. Kobayashi, M. Ohtsu, IEEE J. Sel. Top. Quantum Electron. 15, 1380 (2009)
Y. Tanaka, K. Kobayashi, Physica E 40, 297 (2007)
M.G.A. Bernard, G. Duraffourg, Phys. Status Solidi 1, 699 (1961)
R.J. Van Overstraeten, R.P. Mertens, Solid-State Electron. 30, 1077 (1987)
J.A. Van den Berg, D.G. Armour, S. Zhang, S. Whelan, H. Ohno, T.-S. Wang, A.G. Cullis, E.H.J. Collart, R.D. Goldberg, P. Bailey, T.C.Q. Noakes, J. Vac. Sci. Technol. B 20, 974 (2002)
A. Einstein, P. Ehrenfest, Z. Phys. 19, 301 (1923)
E. Shl, Nonequilibrium Phase Transitions in Semiconductors (Springer, Berlin, 1987), pp. 5–6
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License (https://creativecommons.org/licenses/by-nc/2.0), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
About this article
Cite this article
Kawazoe, T., Mueed, M.A. & Ohtsu, M. Highly efficient and broadband Si homojunction structured near-infrared light emitting diodes based on the phonon-assisted optical near-field process. Appl. Phys. B 104, 747–754 (2011). https://doi.org/10.1007/s00340-011-4596-y
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00340-011-4596-y