Abstract
Investigation was performed on luminescent properties of novel Gd2−x Eu x MoB2O9 (0.02≤x≤2.0) phosphors. The excitation spectra consist of broad band and intense narrow lines. The 4f-4f transitions are situated in a favorable position for excitation by GaN chip emission. The emission spectra consist of transitions from the 5D0 level to the lower 7F manifold, and the emission shows no concentration quenching at higher doping level. The decay time spectra of the 5D0 → 7F2 emission are recorded. Under 395 nm excitation, the intensity of 5D0 → 7F2 transition of GdEuMoB2O9 is 1.2 times stronger than that of commercial Eu3+:Y2O2S phosphor. Gd2MoB2O9:Eu3+ phosphors are promising candidates for near-UV-based solid-state-lighting (SSL).
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Zhang, X., Qiao, X. & Seo, H.J. Photoluminescence properties of Eu3+-doped Gd2MoB2O9 phosphors for LED-based solid-state-lighting. Appl. Phys. B 103, 257–261 (2011). https://doi.org/10.1007/s00340-010-4306-1
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DOI: https://doi.org/10.1007/s00340-010-4306-1