Abstract
In this paper, we propose a novel photovoltaic device using P3HT and ZnO as test materials for the p-type and n-type semiconductors, respectively. To fabricate an electrode of this device, Ag was deposited on a P3HT film by RF-sputtering under light illumination (wavelength λ 0=660 nm) while reversely biasing the P3HT/ZnO pn-junction. As a result, a unique granular Ag film was formed, which originated from a phonon-assisted process induced by an optical near-field in a self-organized manner. The fabricated device generated a photocurrent even though the incident light wavelength was as long as 670 nm, which is longer than the long-wavelength cutoff λ c (=570 nm) of the P3HT. The photocurrent was generated in a wavelength-selective manner, showing a maximum at the incident light wavelength of 620 nm, which was shorter than λ 0 because of the Stark effect brought about by the reverse bias DC electric field applied during the Ag deposition.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
K. Kobayashi, S. Sangu, H. Ito, M. Ohtsu, Phys. Rev. A 63, 013806 (2001)
Y. Tanaka, K. Kobayashi, Physica E 40, 297 (2007)
T. Kawazoe, K. Kobayashi, S. Takubo, M. Ohtsu, J. Chem. Phys. 122, 024715 (2005)
T. Kawazoe, M. Ohtsu, Y. Inao, R. Kuroda, J. Nanophoton 1, 011595 (2007)
T. Yatsui, K. Hirata, W. Nomura, Y. Tabata, M. Ohtsu, Appl. Phys. B 93, 55 (2008)
T. Kawazoe, H. Fujiwara, K. Kobayashi, M. Ohtsu, J. Sel. Top. Quantum Electron. 15, 1380 (2009)
M. Bredol, K. Matras, A. Szatkowski, J. Sanetra, A. Prodi-Schwab, Sol. Energy Mater. Sol. Cells 93, 662 (2009)
X. Ju, F. Wei, K. Varutt, T. Hori, A. Fujii, M. Ozaki, Nanotechnology 19, 435706 (2008)
T. Yatsui, W. Nomura, M. Ohtsu, Nano Lett. 5, 2548 (2005)
J. Joo, J. Vac. Sci. Technol. A 18, 23 (2000)
J. Soederlund, L.B. Kiss, G.A. Niklasson, C.G. Granqvist, Phys. Rev. Lett. 80, 2386 (1998)
H. Fujiwara, T. Kawazoe, M. Ohtsu, Appl. Phys. B 98, 283 (2010)
M. Wang, X. Wang, Sol. Energy Mater. Sol. Cells 91, 1782 (2007)
S. Guenes, H. Neugebauer, S. Sariciftci, Chem. Rev. 107, 1324 (2007)
M. Onoda, K. Tada, H. Nakayama, J. Appl. Phys. 86, 2110 (1999)
A. Khaliq, F. Xue, K. Varahramyan, Microelectron. Eng. 86, 2312 (2009)
J. Callaway, Phys. Rev. 130, 549 (1963)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Yukutake, S., Kawazoe, T., Yatsui, T. et al. Selective photocurrent generation in the transparent wavelength range of a semiconductor photovoltaic device using a phonon-assisted optical near-field process. Appl. Phys. B 99, 415–422 (2010). https://doi.org/10.1007/s00340-010-3999-5
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00340-010-3999-5