Abstract
The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels.
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Ding, K., Zeng, Y.P., Wei, X.C. et al. A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes. Appl. Phys. B 97, 465–468 (2009). https://doi.org/10.1007/s00340-009-3657-y
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DOI: https://doi.org/10.1007/s00340-009-3657-y