Abstract
We fabricated a hemispherical nearly-intrinsic Si-based photodetector with ( \(\bar{1}10)\) plane. The photocurrent generated from the detector under a continuous wave laser at the wavelength of 1.3 μm was observed. The photocurrent shows a quadratic dependence on the incident optical power. The dependence of the photocurrent on the azimuth of the incident optical field is consistent with the anisotropy of the two-photon absorption in Si crystals. The ratio of the two nonzero independent components of the third-order susceptibility of silicon is obtained to be 0.42 from the observed result of the anisotropy of the photocurrent.
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Shi, B., Liu, X., Chen, Z. et al. Anisotropy of photocurrent for two-photon absorption photodetector made of hemispherical silicon with \((\overline{1}10)\) plane. Appl. Phys. B 93, 873–877 (2008). https://doi.org/10.1007/s00340-008-3263-4
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DOI: https://doi.org/10.1007/s00340-008-3263-4