Abstract
In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.
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Kuo, YK., Yen, SH., Yao, MW. et al. Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers. Appl. Phys. B 93, 497–506 (2008). https://doi.org/10.1007/s00340-008-3184-2
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DOI: https://doi.org/10.1007/s00340-008-3184-2