Abstract
It has been shown that the cavity trapped amplified luminescence (CTAL) flux formed within the active region of a powerful 1.02 μm InGaAs/AlGaAs DQW laser diode (LD) with a ridged waveguide structure, can cause the bleaching of passive areas leading to abrupt hysteresis-type changes in the light–current and spectral characteristics. The post-threshold rise of the CTAL flux within the non-lasing parts of the active region is most likely to play significant role in the nonlinear optical phenomena observed in investigated LDs. The frequency-integrated CTAL flux density at which bleaching takes place is equal to 6.5×108 W/m2. The hysteresis-type loop can be removed through the LD “run-in” procedure or high-temperature annealing of the LD chip in an hydrogen atmosphere.
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42.55.Px; 42.70.Hj
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Ryabtsev, G., Bezyazychnaya, T., Bogdanovich, M. et al. Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure. Appl. Phys. B 90, 471–476 (2008). https://doi.org/10.1007/s00340-007-2912-3
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DOI: https://doi.org/10.1007/s00340-007-2912-3