Abstract
This work reports single-frequency laser oscillation at λ=1003.4 nm of a diode-pumped vertical external cavity surface-emitting semiconductor laser for metrological applications. A low thermal resistance of the semiconductor active component is achieved by solid-liquid interdiffusion bonding onto a SiC substrate. The spectro-temporal dynamics of the laser is theoretically studied. Experimentally, an output power of 1.7 W is demonstrated in free running operation, and up to 500 mW in a true single longitudinal mode. Furthermore, single-frequency laser emission at λ=501.7 nm is obtained by intracavity frequency doubling, resulting in a total output power as high as 62 mW.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999)
W.J. Alford, T.D. Raymond, A.A. Allerman, J. Opt. Soc. Am. B 19, 663 (2002)
S. Hoogland, S. Dhanjal, A. Tropper, J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, U. Keller, IEEE Photon. Technol. Lett. 12, 1135 (2000)
A. Garnache, S. Hoogland, A. Tropper, I. Sagnes, G. Saint-Girons, J. Roberts, Appl. Phys. Lett. 80, 3892 (2002)
A. Garnache, A. Kachanov, F. Stoeckel, R. Houdre, J. Opt. Soc. Am. B 7, 1589 (2000)
M. Holm, D. Burns, A. Ferguson, A. Ferguson, M. Dawson, IEEE Photon. Technol. Lett. 11, 1551 (1999)
R.H. Abram, K.S. Gardner, E. Riis, A.I. Ferguson, Opt. Express 12, 5434 (2004)
A. Ouvrard, A. Garnache, L. Cerutti, F. Genty, D. Romanini, IEEE Photon. Technol. Lett. 17, 2020 (2005)
J.E. Hastie, J.M. Hopkins, S. Calvez, C.W. Jeon, D. Burns, R.H. Abram, E. Riis, A.I. Ferguson, M.D. Dawson, IEEE Photon. Technol. Lett. 13, 894 (2003)
S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, Appl. Phys. Lett. 82, 3620 (2003)
J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, L. Spinelli, Proc. SPIE 5332, 143 (2004)
K.S. Kim, J.R. Yoo, S.H. Cho, S.M. Lee, S.J. Lim, J.Y. Kim, J.H. Lee, T. Kim, Y.J. Park, Appl. Phys. Lett. 88, 091107 (2006)
J. Dion, I. Sagnes, M. Strassner, State-of-the-Art Program on Compound Semiconductors XLI (2004)
F. Du Burck, C. Daussy, A. Amy-Klein, A. Goncharov, O. Lopez, C. Chardonnet, IEEE J. Trans. Instrum. Meas. 54, 754 (2005)
J.L. Hall, L.-S. Ma, M. Taubman, B. Tiemann, F.-L. Hong, O. Pfister, J. Ye, IEEE J. Trans. Instrum. Meas. 48, 583 (1999)
W.Y. Cheng, L. Chen, T.H. Yoon, J.L. Hall, Y. Ye, Opt. Lett. 27, 571 (2002)
J.-C. Keller, M. Broyer, J.-C. Lehmann , CR. Acad. Sci. Paris, tome 277-série B, 369 (1973)
J. Ye, L.S. Ma, J.L. Hall, J. Opt. Soc. Am. B 17, 927 (2000)
M. Jacquemet, F. Druon, F. Balembois, P. Georges, B. Ferrand, Opt. Express 13, 2345 (2005)
L. Fan, T.-C. Hsu, M. Fallahi, J. Murray, R. Bedford, Y. Kaneda, J. Hader, A. Zakharian, J. Moloney, S. Koch, W. Stolz, Appl. Phys. Lett. 88, 251117 (2006)
L.A. Coldren, S.W. Morzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995)
M. Jacquemet, M. Domenech, J. Dion, M. Strassner, G. Lucas-Leclin, P. Georges, I. Sagnes, A. Garnache, Proc. SPIE 6184, 61 841X (2006)
M. Reichling, H. Grönbeck, J. Appl. Phys. 75, 1914 (1994)
A. Garnache, A. Ouvrard, D. Romanini, Proc. CLEO Europe 2005, paper CB19
S. Chénais, S. Forget, F. Druon, F. Balembois, P. Georges, Appl. Phys. B 79, 221 (2004)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
42.55.Px; 42.55.Xi; 42.62.Eh; 42.65.Ky
Rights and permissions
About this article
Cite this article
Jacquemet, M., Domenech, M., Lucas-Leclin, G. et al. Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling. Appl. Phys. B 86, 503–510 (2007). https://doi.org/10.1007/s00340-006-2499-0
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00340-006-2499-0