Abstract
A loss-coupled 1550 nm distributed feedback (DFB) laser diode with automatically buried absorptive InAsP layer for the application to radio-over-fiber network was experimentally investigated where the automatically buried layer in the epitaxial growth reduced the process steps in loss-coupled DFB laser fabrication. It showed linearity in electro-optical conversion characteristics with reduced third order intermodulation distortion of -70 dBc which is comparable to the previous results of DFB lasers as the optical power increases to 5 mW under two-tone test at 1.8 GHz bands.
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42.55.Px; 42.79.Sz
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Han, JH., Lhee, Z. & Park, SW. Characterization of loss-coupled 1550 nm DFB lasers for microwave optical links. Appl. Phys. B 85, 85–88 (2006). https://doi.org/10.1007/s00340-006-2402-z
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DOI: https://doi.org/10.1007/s00340-006-2402-z