Abstract
We have developed a model that describes the optical response of a semiconductor quantum dot medium in a cavity in order to investigate pattern and cavity solitons formation. This model, beyond the inclusion of the inhomogeneous broadening of the quantum dot linewidth [1] (due the fluctuations of the quantum dot sizes that arise in self-organized growth), takes into account more complex phenomena such as the thermal escape and capture as well as Auger scattering mechanisms coupling the quantum dot itself with the wetting layer, and carrier diffusion in the unconfined directions of the wetting layer. We have studied the conditions for the onset of bistability and modulational instability and characterize the patterns formed at the bifurcated solutions. New features brought by these terms and indications on the most favourable regimes for cavity solitons formation are discussed.
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42.65.Sf; 42.65.An; 78.67.Hc
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Perrini, I., Barbay, S., Maggipinto, T. et al. Model for optical pattern and cavity soliton formation in a microresonator with self-assembled semiconductor quantum dots. Appl. Phys. B 81, 905–912 (2005). https://doi.org/10.1007/s00340-005-2030-z
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DOI: https://doi.org/10.1007/s00340-005-2030-z