Abstract
This paper reports a theoretical design of chirped mirrors in 1.3-μm double-section semiconductor lasers to achieve high reflectivity and dispersion compensation over a broad bandwidth. Analytic expressions for reflectivity, group delay and group delay dispersion are derived. We use for the first time chirped air/semiconductor layer pairs as mirrors for higher-order dispersion compensation in semiconductor lasers. Our optimised calculations demonstrate that the broad-band mirrors designed consist of a total of only 12 air/semiconductor layers and achieve a reflectivity higher than 99.8%, a smooth group delay and almost stable dispersion in the laser cavity over a 100-nm bandwidth. Due to a high index contrast of both types of the layers, n l = 1, n h~ 3.5, a high-reflectivity bandwidth of > 700 nm is obtained in 1.3-μm semiconductor lasers. We also compare our results with that of a commercial simulation program and show a good agreement between them. As a conclusion, we assume from the theoretical results that air/semiconductor layer pairs with varying thicknesses used at one end of double-section semiconductor lasers can lead to femtosecond optical pulse generation using mode-locking techniques.
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References
P. Vasilev, Ultrafast Diode Lasers, Fundamentals and Applications (Artech House, Boston, London, Norwood, MA, 1995)
J. Singh, Semiconductor Optoelectronics: Physics and Technology (McGraw-Hill, New York, 1995)
D.H. Sutter, L. Gallmann, N. Matuschek, F. Morier-Genoud, V. Scheuer, G. Angelow, T. Tschudi, G. Steinmeyer, U. Keller, Appl. Phys. B: Lasers Opt. 70(Suppl.), S5 (2000)
N. Kazunori, Appl. Phys. Lett. 64, 261 (1994)
J. Kuhl, M. Serenyi, E.O. Göbel, Opt. Lett. 12, 334 (1987)
R. Paschotta, G.J. Spühler, D.H. Sutter, N. Matuschek, U. Keller, M. Moser, R. Hövel, V. Scheuer, G. Angelow, T. Tschudi, Appl. Phys. Lett. 75, 2166 (1999)
K. Sato, A. Hirano, H. Ishii, IEEE J. Sel. Top. Quantum Electron. 5, 590 (1999)
R. Szipöcs, K. Ferencs, C. Spielman, F. Krausz, Opt. Lett. 19, 201 (1994)
Z. Xinping, Ph.D. dissertation, University of Marburg (2002)
F.X. Kartner, N. Matuschek, T. Schibli, U. Keller, H.A. Haus, C. Heine, R. Morf, V. Scheuer, M. Tilsch, T. Tschudi, Opt. Lett. 22, 831 (1997)
N. Matuschek, F.X. Kartner, U. Keller, IEEE J. Sel. Top. Quantum Electron. 4, 197 (1998)
D.H. Sutter, I.D. Jung, F.X. Kartner, N. Matuschek, F. Morier-Genoud, V. Scheuer, M. Tilsch, T. Tschudi, U. Keller, IEEE J. Sel. Top. Quantum Electron. 4, 169 (1998)
G.P. Agrawal, Semiconductor Lasers: Past, Present and Future (American Institute of Physics, New York, 1995)
G.P. Agrawal, N.K. Dutta, Semiconductor Lasers, 2nd edn. (Van Nostrand Reinhold, New York, 1993)
N. Matuschek, F.X. Kartner, U. Keller, IEEE J. Quantum Electron. 33, 295 (1997)
M. Born, E. Wolf, Principles of Optics, 7th edn. (Cambridge University Press, Cambridge, 1999)
M. Gerken, D.A.B. Miller, Appl. Opt. 42, 1330 (2003)
N. Matuschek, F.X. Kartner, U. Keller, IEEE J. Quantum Electron. 35, 129 (1999)
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An erratum to this article can be found at http://dx.doi.org/10.1007/s00340-005-1932-0.
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Cakmak, B., Karacali, T. & Yu, S. Theoretical investigation of chirped mirrors in semiconductor lasers. Appl. Phys. B 81, 33–37 (2005). https://doi.org/10.1007/s00340-005-1868-4
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DOI: https://doi.org/10.1007/s00340-005-1868-4