Abstract
Using an external cavity consisting of an etalon and a mirror, dual-wavelength operation of a high-power broad-area multi-stripe diode laser is achieved. The reflection of the etalon is used as the output beam of the system. The free-running bandwidth of the laser diode is about 2.0 nm. At dual-wavelength operation, the bandwidth of each wavelength component is narrowed to about 0.07 nm, while the space between them is 1.65 nm, determined by the FSR of the etalon. We obtain an available dual-wavelength output power of 2.0 W at the drive current of 6.5 A. The power ratio of the components at two different wavelengths can be changed by changing the temperature of the diode laser. To tune the wavelength of the dual-wavelength output, the temperature of the laser diode and the tilt angle of the etalon are changed simultaneously
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
L. Goldberg, H.F. Taylor, J.F. Weller: Appl. Phys. Lett. 46, 236 (1985)
S. MacCormack, J. Feinberg, M.H. Garrett: Opt. Lett. 19, 120 (1994)
K. Iida, H. Horiuchi, O. Matoba, T. Omatsu, T. Shimura, K. Kuroda: Opt. Commun. 146, 6 (1998)
K. Iida, X. Tan, T. Shimura, K. Kuroda: Appl. Opt. 36, 2491 (1997)
H. Tsuchida: Opt. Lett. 19, 1741 (1994)
X. Wang, X. Chen, J. Hou, D. Yang, Y. Wang: Opt. Commun. 178, 165 (2000)
K.S. Lee, C. Shu: IEEE J. Quantum. Electron. QE-33, 1832 (1997)
A.C.F.den Boer, K.A.H.van Leeuween, H.C.W. Beijerinck, C. Fort, F.S. Pavone: Appl. Phys. B 63, 117 (1996)
A. Shiratori, M. Obara: Appl. Phys. Lett. 69, 1515 (1996)
T. Omatsu, A. Katoh, K. Okada, S. Hatano, A. Hasegawa, M. Tateda, I. Ogura: Opt. Commun. 146, 167 (1998)
S.J. Jensen, M. Lobel, P.M. Petersen: Appl. Phys. Lett. 76, 535 (2000)
T. Pawletko, M. Houssin, M. Knoop, M. Vedel, F. Vedel: Opt. Commun. 174, 223 (2000)
B. Chu, I.H. White: Appl. Phys. Lett. 65, 2928 (1994)
C. Shu, Y.H. Lee: IEEE J. Quantum. Electron. QE-32, 1976 (1996)
D.N. Wang, C. Shu: IEEE Photonics Technol. Lett. 9, 1211 (1997)
L. Hsu, L.C. Chi, S.C. Wang, C.L. Pan: Opt. Commun. 168, 195 (1999)
D.J.L. Birkin, E.U. Rafailov, W. Sibbett: Appl. Phys. Lett. 80, 1862 (2002)
I.S. Moskalev, S.B. Mirov, T.T. Basiev, V.V. Fedorov, G.J. Grimes, E. Berman: Proc. SPIE 4287, 128 (2001)
F. Wang, A. Hermerschmidt, H.J. Eichler: Opt. Commun. 209, 391 (2002)
F. Wang, A. Hermerschmidt, H.J. Eichler: Opt. Commun. 218, 135 (2003)
B. Sumpf, R. Hulsewede, G. Erbert, C. Dzionk, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, G. Tränkle: Electron. Lett. 38, 183 (2002)
M.T. Kelemen, F. Rinner, J. Rogg, N. Wiedmann, R. Kiefer, M. Walther, M. Mikulla, G. Weimann: Proc. SPIE 4648, 75 (2002)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
42.55.Px; 42.60.Fc; 42.60.Da
Rights and permissions
About this article
Cite this article
Hermerschmidt, A., Wang, F. & Eichler, H. Dual-wavelength bandwidth-narrowed output of a high-power diode laser using a simple external cavity. Appl. Phys. B 79, 321–324 (2004). https://doi.org/10.1007/s00340-004-1552-0
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00340-004-1552-0