Abstract
We report the results of experimental investigations of nonlinear properties of InP, GaAs and InGaAs Schottky barrier diodes (SBD) in the near-infrared range (λ≈800 nm). The results of our previous and present work show that SBD have a unique broadband spectral sensitivity (from the millimeter to the visible range). As video detectors the GaAs-SBD proved to be the most sensitive among the other diodes, but they concede to the InP-SBD as frequency mixer–multipliers in spite of their higher cut-off frequency. The higher efficiency of the InP-SBD in a mixer–multiplier mode is supposedly connected with the bulk nonlinearity properties of indium phosphide, lower noise and lower time constants, characterizing the charge-carrier energy growth in an electric field and its relaxation. We found that the optimal operation conditions for SBD suppose not only the optimal electric regime (applying a defined bias or a defined radiation source power) but also the optimal mutual orientation of a laser radiation polarization, a contacting wire (playing the role of an antenna) and a laser beam.
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07.57.Kp; 42.65.Ky; 42.79.Nv
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Chepurov, S., Klementyev, V., Kuznetsov, S. et al. Experimental investigation of Schottky barrier diodes as nonlinear elements in 800-nm-wavelength region. Appl. Phys. B 79, 33–38 (2004). https://doi.org/10.1007/s00340-004-1520-8
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DOI: https://doi.org/10.1007/s00340-004-1520-8