Abstract
This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunction internal photoemission infrared photodetectors. Results are compared with those of a single barrier sample which has nominally the same parameters. It is shown that the cut-off wavelength of the multi-barrier device depends on the operating temperature; therefore, it can be tuned to the desired region within the device capacity by changing the device temperature. The proof of concept device, which has two Si1-xGex/Si junctions with x=0.1 and x=0.23, allows the tuning of the cut-off wavelength from 19.9 μm to 11.7 μm for 10 K and 50 K, respectively.
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85.60.Gz; 79.60.-i; 78.66.-w
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Aslan, B., Turan, R., Liu, H. et al. Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors. Appl Phys B 78, 225–228 (2004). https://doi.org/10.1007/s00340-003-1343-z
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DOI: https://doi.org/10.1007/s00340-003-1343-z