Abstract.
The epitaxial growth of CeO2 thin films has been realized on (100) InP substrates using reactive r.f. magnetron sputtering. Oxide films were nucleated in the presence of molecular hydrogen (4% H2/Ar sputtering gas) in order to reduce the native oxide formation on the InP surface, which interferes with CeO2 epitaxy. A metal cerium target was used as the cation source, with water vapor serving as the oxidizing species. Epitaxial films were sputter-deposited at a substrate temperature of 550 °C in a H2O vapor pressure of approximately 10-3 Torr. Crystallinity of the oxide films was examined using θ–2θ X-ray diffraction, ω-rocking curves, and in-plane φ-scans. The best results were obtained when the initial nucleation layer was deposited with P(H2O)<10-5 Torr, followed by deposition at P(H2O)=10-3 Torr. The epitaxial growth of CeO2 on InP could prove enabling in efforts to integrate functional oxides with InP-based optoelectronic and microwave technologies.
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Received: 20 February 20002 / Accepted: 21 February 2002 / Published online: 19 July 2002
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Ivill, M., Patel, M., Kim, K. et al. Epitaxial growth of CeO2 on (100) InP using reactive r.f. magnetron sputtering . Appl Phys A 75, 699–702 (2002). https://doi.org/10.1007/s003390201411
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DOI: https://doi.org/10.1007/s003390201411