Abstract
Amorphous vanadium pentoxide thin films were prepared by CVD of VOCl3 with H2O at room temperature and by vacuum deposition. The stoichiometry was estimated from quantitative EPR measurements. The amorphous to crystalline transition temperatures, 453–463 K for vacuum deposited films and 523±10 K for films prepared by CVD, were determined by DTA, polarization microscopy and electrical conductivity measurements. The structural changes were monitored by electron microscopy and EPR.
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Michailovits, L., Bali, K., Szörényi, T. et al. Characterization of amorphous vanadium pentoxide thin films prepared by chemical vapour deposition (CVD) and vacuum deposition. Acta Physica 49, 217–221 (1980). https://doi.org/10.1007/BF03158746
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DOI: https://doi.org/10.1007/BF03158746