Abstract
Absorbing thin films can be characterized by a complex refractive index\(\bar n_1 = n_1 - ik_1 \). The complex refractive index raises several experimental and computational problems: the determination of the extinction coefficientk 1 requires a further, independent parameter, and a further, independent equation. For the determination of the complex refractive index and film thickness (d) on the systems Au/Si, Al/Si, NiO/Ni and thin films of Au, Al and NiO, respectively_— the reflectanceR was applied as new parameter. The dependence ofn 1 andk 1 ond was studied using an idealized and a realistic layer model.
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Szücs, B., Ádám, J. & Jakab, P. Ellipsometric study of semiconductor — Metal and metal — Metal oxide thin films system. Acta Physica 49, 159–166 (1980). https://doi.org/10.1007/BF03158731
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DOI: https://doi.org/10.1007/BF03158731