Abstract
Experiences obtained in the growth of Bi4Ge3O12 single crystals together with characteristic data on the crystals are described. The tail of the self-absorption near the absorption edge is shown to depend sensitively on crystal quality. This property can be used for crystal characterization.
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Dedicated to Prof. I. Tarján on his 70th birthday.
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Voszka, R., Gévay, G., Földvári, I. et al. Growth and characterization of Bi4Ge3O12 single crystals. Acta Physica 53, 7–13 (1982). https://doi.org/10.1007/BF03156171
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DOI: https://doi.org/10.1007/BF03156171