Abstract
The influence of convection in a melt on the compositional homogeneity of the TLZ-grown In0.3Ga0.7As crystals has been investigated by growing crystals with various dimensions on the ground. Excellent compositional homogeneity such as 0.3 plus or minus 0.01 in InAs mole fraction for a distance of 25 mm was obtained when the melt diameter was limited to 2 mm and convective flow in the melt was suppressed. On the other hand, when the crystal diameter was increased to 10 mm, both axial and radial compositional homogeneity was deteriorated due to convection in the melt. Comparing with the numerical simulation, convective flow velocity less than 1.4 mm/h may be sufficient for growing homogeneous crystals and it is not so difficult to suppress convective flow velocity below 1.4 mm/h for 10 mm diameter crystals in microgravity. Therefore, larger homogeneous In0.3Ga0.7As crystals are expected to be grown by the TLZ method on board the International Space Station.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Naumann, R. J.: Modeling flows and solute redistribution resulting from small transverse accelerations in Bridgman growth. J. Crystal Growth, vol. 142, p. 253 (1994).
Kinoshita, K., Kato, H., Iwai, M., Tsuru, T., Muramatsu, Y., Yoda, S.: Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus zone method. J. Crystal Growth, vol. 225, p. 59 (2001).
Kinoshita, K., Hanaue, Y., Nakamura, H., Yoda, S., Iwai, M., Tsuru, T., Muramatsu, Y.: Growth of homogeneous mixed crystals of In0.3Ga0.7As by the traveling liquidus-zone method. J. Crystal Growth, vol. 237-239, p. 1859(2002).
Nakamura, H., Hanaue, Y., Kato, H., Kinoshita, K., Yoda, S.: A onedimensional model to predict the growth conditions of InxGa1−xAs alloy crystals grown by the traveling liquidus-zone method. J. Crystal Growth, vol. 258, p. 49 (2003).
Maekawa, T., Hiraoka, Y., Ikegami, K., Matsumoto, S.: Numerical modelling and analysis of binary compound semiconductor growth under microgravity conditions. J. Crystal Growth, vol. 229, p. 605 (2001).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kinoshita, K., Ogata, Y., Adachi, S. et al. Excellent compositional homogeneity in In0.3Ga0.7As crystals grown by the traveling liquiduszone (TLZ) method. Microgravity sci. Technol. 16, 71–73 (2005). https://doi.org/10.1007/BF02945950
Issue Date:
DOI: https://doi.org/10.1007/BF02945950