Abstract
Aiming at boosting the low ultraviolet (UV) responsivity induced by the negative impact of the surface ‘dead layer’ in silicon-based conventional photodiode (CPD), Si photodiodes with five different structures, including both the novel grid structure photodiode (GSPD) and CPD, have been manufactured using thermal diffusion process and tested. The results show that the UV responsivity around 365 nm of GSPD could be as high as 6 times that of CPD, while the high visible (VIS) responsivity is sharply suppressed by the employment of grid shaped junction (GSJ) in the GSPD, which has realized the expectation of selective UV enhancement with prospect for application.
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Foundation item: Supported by the Foundation of State key Laboratory of Transducer Technology of Shanghai (SKt 0401)
Biography: WANG Ying (1981-), male, Master candidate, research direction: semiconductor devices, OLED and related circuits.
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Ying, W., Bing-ruo, C. & Yu-ping, L. Silicon-based grid structure photodiode with selective UV enhancement. Wuhan Univ. J. Nat. Sci. 10, 529–533 (2005). https://doi.org/10.1007/BF02831139
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DOI: https://doi.org/10.1007/BF02831139