Abstract
Thin epitaxial films of HgSe and Hg1−xCdxSe (x≤0.34) were successfully grown for the first time by molecular beam epitaxy. Film growth parameters are discussed, and results of structural, electrical, and optical studies are reported.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
T.C. Harman, W.M. Kleiner, A.J. Strauss, G.B. Wright, J.G. Mavroides, J.M. Honig and D.H. Dickey,Solid State Commun. 2, 305 (1964).
J.P. Faurie and A. Million,J. Cryst. Growth 54, 582 (1981).
J.W. Cook Jr., K.A. Harris and J.F. Schetzina,Mater. Res. Soc. Symp. Proc. 90, 419 (1987).
J.P. Faurie, A. Million, R. Boch and J.L. Tissot,J. Vac. Sci. Tech. A 1, 1593 (1983).
Z.A. Munir, D.J. Meschi and G.M. Pound,J. Cryst. Growth 15, 263 (1972).
C.R. Whitsett, J.G. Broerman and C.J. Summers,Semiconductors and Semimetals, eds. R.K. Willardson and A.C. Beer (Academic, New York, 1981), Vol. 16 (Editor note: This reference is the entire book).
D.A. Nelson, J.G. Broerman, C.J. Summers, and C.R. Whitsett,Phys. Rev. B 18, 1658 (1978).
N. Samarth, H. Luo, J.K. Furdyna, S.B. Qadri, Y.R. Lee, A.K. Ramdas and N. Otsuka,J. Electron. Mater. 19, 543 (1990).
R.J. Koestner and H.F. Schaake,J. Vac. Sci. Technol. A6, 2834 (1988).
K.A. Harris, T.H. Myers, R.W. Yanka, L.M. Mohnkern, R.W. Green and N. Otsuka,J. Vac. Sci. Technol. A8, 1013 (1990).
Y. Lansari, Z. Yang, S. Hwang, F.E. Reed, A.T. Sowers, J.W. Cook, Jr. and J.F. Schetzina,J. Cryst. Growth 111, 720 (1991).
J. Stankiewicz,Phys. Status Solidi (b) 93, 113 (1979).
I.N. Borisov, P.S. Kireev, V.M. Mikhailin and V. M. Bezborodova,Sov. Phys. Semicond. 5, 734 (1971).
K. Kumazaki,J. Cryst. Growth 101, 687 (1990).
S.L. Lehoczky, J.G. Broerman, D.A. Nelson and C.R. Whitsett,Phys. Rev. B 9, 1598 (1974).
K. Kumazaki, E. Matsushima and A. Odajima,Phys. Status Solidi (a) 37, 579 (1976).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Lansari, Y., Cook, J.W. & Schetzina, J.F. Growth of HgSe and Hg1−xCdxSe thin films by molecular beam epitaxy. J. Electron. Mater. 22, 809–813 (1993). https://doi.org/10.1007/BF02817490
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02817490