Abstract
Catalytic effect of metal elements was observed in the growth of GaN and Mg-doped GaN micro-crystals. High quality GaN micro-crystals were synthesized by direct reaction of gallium and ammonia using a Ni-mesh catalyst. Mg-doped GaN micro-crystals were also grown by the same reaction scheme in the presence of MgCl2. The growth rate of GaN micro-crystals markedly increased in the presence of the catalyst. The average grain size of GaN microcrystals synthesized in the presence of Ni and Mg metals was larger than that in the absence of the metals. The characterization of the catalytically grown GaN micro-crystals using transmission electron microscopy and X-ray and/or electron diffraction pattern showed the growth of dislocation free hexagonal GaN micro-crystals. Photoluminescence (PL) and Catholuminescence (CL) measurements also showed the growth of good quality n-and p-type GaN microcrystals using Ni catalyst
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Akasaki, I. and Amano, H., “Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters”,Jpn. J. Appl. Phys., 36, 5393 (1997).
Aujol, E., Trassoudaine, A., Castelluci, D. and Cadoret, R., “Influence of the Partial Pressure of GaCl3 in the Growth Process of GaN by HVPE Under Nitrogen”,Mat. Sci. Eng.,B82, 65 (2001).
Ban, V. S., “Mass Spectrometric Studies of Vapor-phase Crystal Growth”,J. Electrochem. Soc.,119, 761 (1972).
Bassignana, I. C., Wagemann, K., Kuppers, J. and Ertl, G., “Adsorption and Thermal Decomposition of Ammonia on a Ni(110) Surface: Isolation and Identification of Adsorbed NH2 and NH”,Surf. Sci.,175, 22 (1986).
Cadoret, R., “Growth Mechanisms of (0-0.1)GaN Substrates in the Hydride Vapour-phase Method: Surface Diffusion, Spiral Growth, H2 and GaCl3 Mechanisms”,J. Crystal Growth, 205, 123 (1999).
Chen, C. C., Yeh, C. C., Chen, C. H., Yu, M. Y., Liu, H. L., Wu, J. J., Chen, K. H., Chen, L. C., Peng, J. Y. and Chen, Y. F., “Catalytic Growth and Characterization of Gallium Nitride Nanowires”,J. Am. Chem. Soc.,123, 2791 (2001).
Cherns, D., Young, W. T., Steeds, J. W., Ponce, F. A. and Nakamura, S., “Observation of Coreless Dislocations in α-GaN”,J. Cryst. Growth,178, 201 (1997).
Cho, J., Kim, S. and Char, K., “Fabrication of Highly Ordered Multi-layer Thin Films and Its Applications”,Korean J. Chem. Eng.,20, 174 (2003).
Chrysostomou, D., Flowers, J. and Zaera, F, “The Thermal Chemistry of Ammonia on Ni(110)”,Surf. Sci.,439, 34 (1999).
Goodwin, T. J., Leppert, V. J., Risbud, S. H., Kennedy, I. M. and Lee, H. W. H., “Synthesis of Gallium Nitride Quantum Dots Through Reactive Laser Ablation”,Appl. Phys. Lett.,70, 3122 (1997).
Gross, M., Henn, G, Ziegler, J., Auenspacher, P., Cychy, C. and Schroder, H., “Characteristics of Undoped and Magnesium Doped GaN Films Grown by Laser Induced MBE”Mater. Sci. Eng.,B59, 94 (1999).
Ha, J. S., Park, K. H. and Park, K. W., “STM Investigation of Nano-structures Fabricated on Passivated Si Surfaces”Korean J. Chem. Eng., 20, 169 (2003).
Jeong, S. M., Shim, H. W., Yoon, H. S., Cheong, M. G., Choi, R. J., Suh, E.-K. and Lee, H. J., “Two Different Behavior Patterns of Photoluminescence Depending on Mg Doping Rate in p-type GaN Epilayers”,J. Appl. Phys.,91, 9711 (2002).
Kamp, M., Mayer, M., Pelzman, A. and Ebeling, K. J., “Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia”,J. Nitride Semiconductor Research, 2, 26 (1997).
Kanie, H., Kawano, T., Sugimoto, K. and Kawai, R., “Photoluminescence Excitation Spectrum of Undoped and Zn Doped InGaN Microcrystals”, Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf., Series1, 606 (2000).
Kataoka, F., Satoh, Y, Suda, Y, Honda, K. and Toki, H., “Blue Phosphor GaN: Zn for VFDs and FEDs”, Physics & Chemistry of luminescent materials, ECS 17 (1999).
Kibria, A. K., Fazle, M., Mo, Y. H. and Yun, M. H., “Effects of Bimetallic Catalyst Composition and Growth Parameters on the Growth Density and Diameter of Carbon Nanotubes”,Korean J. Chem. Eng.,18, 208 (2001).
Kim, J. R., So, H. M., Park, J. W. and Kim, “Electrical Transport Properties of Individual Gallium Nitride Nanowires Synthesized by Chemical-vapor-deposition”,Appl. Phys. Lett., 80, 3548 (2002).
Klauber, C., Alvey, M. D. and Yates, J. T. Jr., “NH3 Adsorption on Ni(110) and the Production of the NH2 Species by Electron Irradiation”,Surf. Sci., 154, 139 (1985).
Kurai, S., Abe, T., Naoi, Y. and Sakai, S., “Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition”Jpn. J. Appl. Phys., 35, 1637 (1996).
Lachab, M., Youn, D. H., Fareed, R. S. Q., Wang, T. and Sakai, S., “Characterization of Mg-doped GaN Grown by Metalorganic Chemical Vapor Deposition”,Solid-State Electronics, 44, 1669 (2000).
Lee, H. and Harris, J. S. Jr., “Vapor Phase Epitaxy of GaN using GaCl3/ N2 and NH3/N2”,J. Crystal Growth,169, 689 (1996).
Li, H. D., Yang, H. B., Zou, G. T., Yu, S., Lu, J. S., Qu, S. C. and Wu, Y. J., “Formation and Photoluminescence Spectrum of w-GaN Powdef”,J. Crystal Growth,171, 307 (1997).
Liu, S. S. and Stevenson, D. A., “Growth Kinetics and Catalytic Effects in the Vapor Phase Epitaxy of Gallium Nitride”J. Electrochem. Soc., 125, 1161 (1978).
McMurran, J., Kouvetakis, J., Nesting, D. C., Smith, D. J. and Hubbard, J. L., “Formation of a Tetrameric, Cyclooctane-like, Azidochlorogallane, [HClGaN3]3 and Related Azidogallanes. Exothermic Single-Source Precursors to GaN Nanostructures”,J. Am. Chem. Soc,120, 5233 (1998).
Nahm, K. S., Mo, Y. H. and Shajahan, M., “Catalytic Growth of Semi-conductor Micro- and Nano-crystals using Transition Metal Catalysts”,Korean J. Chem. Eng., 19, 510 (2002).
Nahm, K. S., Yang, S. H. and Ahn, S. H., “Structural and Optical Characterization of Thick GaN Films Grown by the Direct Reaction of Metal Ga and NH3 in CVD Reactor”,Korean J. Chem. Eng., 17, 105 (2000).
Park, Y. J., Son, M. H., Kim, E. K. and Min, S. K., “Formation of GaN Micro-Crystals by the Direct Reaction of NH3 with a Ga-Melt”,J. Kor. Phys. Soc.,32, 621 (1998).
Porowdki, S., “High Pressure Growth of GaN-New Prospects for Blue Lasers”,J. Crystal Growth, 166, 583 (1996).
Porowski, S., “Bulk and Homoepitaxial GaN-growth and Characterization”,J. Crystal Growth, 189/190, 153 (1998).
Roh, C. H., Park, Y. J., Kim, E. K. and Shim, K. B., “The Effect of Metallic Catalysts on the Synthesis of GaN Micro-crystals”,J. Crystal Growth,237/239, 926 (2002).
Shibata, M., Furuya, T., Sakaguchi, H. and Kuma, S., “Synthesis of Gallium Nitride by Ammonia Injection into Gallium Melt”,J. Crystal Growth, 196, 47 (1999).
Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarev, A., Morkoc, H. and Goldenberg, B., “Mechanisms of Band-edge Emission in Mg-doped p-type GaN”,Appl. Phys. Lett., 68, 1883 (1996).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Nahm, K.S., Kim, T.Y. & Lee, S.H. Catalytic effect of metal elements on the growth of GaN and Mg-doped GaN micro-crystals. Korean J. Chem. Eng. 20, 653–658 (2003). https://doi.org/10.1007/BF02706903
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF02706903